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2N5109

Part Number	2N5109
Manufacturer	Microsemi Corporation
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Published	Mar 22, 2005
Detailed Description	140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCR...
Datasheet	2N5109 PDF File

Overview

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1.
2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @ 200 MHz 1.
Emitter 2.
Base 3.
Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment.
Applications include amplifier; pre-driver, driver, and output stages.
Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 3.
0 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75ºC (1) Derate above 25ºC 2.
5 20 Watts mW/ ºC Note 1.
Total Device dissipation at TA = 25ºC is 1 Watt.
MSC1304.
PDF 10-25-99 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO(sus) BVCER(sus) ICEO IEBO Test Conditions Min.
Collector-Emitter Sustaining Voltage (IC=5.
0 mAdc, IB=0) Collector-Emitter Sustaining Voltage (IC = 5.
0 mAdc, RBE = 10 ohms) Collector Cutoff Current (VCE = 15 Vdc, IB = 0) Emitter Cutoff Current (VEB = 3.
0 Vdc, IC = 0) 20 40 Value Typ.
Max.
20 100 Unit Vdc Vdc µA µA (on) HFE DC Current Gain (IC = 360 mAdc, VCE = 5.
0 Vdc) (IC = 50 mAdc, VCE = 15.
0 Vdc) 5 40 120 - DYNAMIC Symbol fT Test Conditions Min.
Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) Value Typ.
1200 Max.
Unit MHz MSC1304.
PDF 10-25-99 2N5109 FUNCTIONAL Symbol Test Conditions Min.
Maximum Unilateral Gain (1) Maximum Available Gain Insertion Gain IC = 50 mAdc, VCE = 15Vdc, f = 200 MHz IC = 50 mAdc, VCE = 15Vdc, f = 200 MHz IC = 50 mAdc, VCE = 15Vdc, f = 200 MHz Value Typ.
12 11.
2 10.
5 Max.
Unit dB dB dB G U max 9.
5 MAG 2 |S21| Table 1.
Common Emitter S-Parameters, @ VCE = 15 V, IC = 50 mA f S11 (MHz) 100 200 300 400 500 600 700 80...

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