MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 3 GATE 1 DRAIN 2N5457 *Motorola Preferred Device 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Drain – Source Voltage Drain – Gate Voltage Reverse Gate – Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C VDS VDG VGSR IG PD 25 25 – 25 10 310 2.
82 Junction Temperature Range TJ 125 Storage Channel Temperature Range Tstg – 65 to +150 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = –10 µAdc, VDS = 0) Gate Reverse Current (VGS = –15 Vdc, VDS = 0) (VGS = –15 Vdc, VDS = 0, TA = 100...

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