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2N5400

Philips
Part Number 2N5400
Manufacturer Philips
Description PNP high-voltage transistors
Published Jul 20, 2016
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5400; 2N5401 PNP high-voltage transistors Product specificat...
Datasheet PDF File 2N5400 PDF File

2N5400
2N5400


Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5400; 2N5401 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors PNP high-voltage transistors Product specification 2N5400; 2N5401 FEATURES • Low current (max.
300 mA) • High voltage (max.
150 V).
APPLICATIONS • General purpose switching and amplification • Telephony applications.
DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package.
NPN complements: 2N5550 and 2N5551.
PINNING PIN 1 2 3 collector base emitter DESCRIPTION handbook, halfpage1 2 3 2 MAM280 1 3 Fig.
1 Simplified outline (TO-92; SOT54) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage 2N5400 2N5401 collector-emitter voltage 2N5400 2N5401 peak collector current total power dissipation DC current gain 2N5400 2N5401 transition frequency 2N5400 2N5401 CONDITIONS open emitter open base Tamb ≤ 25 °C IC = 10 mA; VCE = −5 V IC = −10 mA; VCE = −10 V; f = 100 MHz MIN.
− − − − − − 40 60 100 100 MAX.
UNIT −130 −160 V V −120 −150 −600 630 V V mA mW − − 400 MHz 300 MHz 1997 May 22 2 Philips Semiconductors PNP high-voltage transistors Product specification 2N5400; 2N5401 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb collector-base voltage 2N5400 2N5401 collector-emitter voltage 2N5400 2N5401 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector Tamb ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient note 1 Note 1.
Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT − −130 V − −160 V − −120 V −...



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