Medium Power
Transistor
Description:
Medium Power Plastic
PNP, TO-126, Silicon
Transistor.
Designed for driver circuits, switching, and amplifier applications.
Features:
• Low Saturation Voltage: VCE(sat) 0.
6V DC IC = 1A • Excellent Power Dissipation Due to Thermopad Construction
PD = 30 @ TC = 25°C
Absolute Maximum Ratings
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Symbol VCEO VCBO VEBO IC IB
PD
Rating 80 80 5 1 1 30 0.
24
Unit
V
A W mW/°C
Tj, Tstg -65 to +150
°C
PNP
Electrical Characteristics (Ta ...