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2N4900X

Part Number	2N4900X
Manufacturer	Seme LAB
Description	PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR
Published	Mar 23, 2005
Detailed Description	2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.6...
Datasheet	2N4900X PDF File

Overview

2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) 3.
68 (0.
145) rad.
max.
6.
35 (0.
250) 8.
64 (0.
340) 3.
61 (0.
142) 3.
86 (0.
145) rad.
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR APPLICATIONS 24.
33 (0.
958) 24.
43 (0.
962) 0.
71 (0.
028) 0.
86 (0.
034) 14.
48 (0.
570) 14.
99 (0.
590) 4.
83 (0.
190) 5.
33 (0.
210) 9.
14 (0.
360) min.
1.
27 (0.
050) 1.
91 (0.
750) TO–66 Metal Package.
ABSOLUTE MAXIMUM RATINGS V(BR)CBO V(BR)CEO V(BR)EBO IC IB PD TC Tstg RθJC Semelab plc.
(Tcase = 25°C unless otherwise stated) 2N4898X 2N4899X 2N4900X Collector – Base Breakdown Voltage –40V –60V –80V Collector – Emitter Breakdown Voltage –40V –60V –80V Emitter – Base Breakdown Voltage –5V Continuous Collector Current –4A Base Current –1A Total Power Dissipation 25W Operating Case Temperature Range –65 to +200°C Storage Temperature Range –65 to +200°C Thermal Resistance , Junction To Case 7.
0°C/W Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk Prelim.
9/96 11.
94 (0.
470) 12.
70 (0.
500) Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO–66 metal package.
2N4898X 2N4899X 2N4900X Electrical Characteristics (TC = 25°C unless otherwise stated.
) Parameter ICEO ICEX ICBO ICES VCE(sat)* VBE(sat)* VBE* hFE* Collector – Emitter Cut-off Current Collector – Emitter Cut-off Current Collector – Base Cut-off Current Collector – Emitter Leakage Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Base – Emitter Voltage DC Current Gain Test Conditions VCE = –30V VCE = V(BR)CEO VCB = V(BR)CBO VCE = V(BR)CEO IC = –1A IC = –1A IC = –1A VCE = –1V VCE = –1V VCE = –1V VCE = –10V f = 1 MHz IB = 0 VBE = –1.
5V TC = 150°C IE = 0 VBE = 0 IB = –0.
1A IB = –0.
1A VCE = –1V IC = –50mA IC = –500mA IC = –1A IC = –250mA Min.
Typ.
Max.
Units 0.
50 100 1.
0 0.
1 100 –0.
60 –1.
3V –1.
3V mA µA mA mA µA V V V — 40 20 10 3.
0 MHz 130 ft Transition Frequency * Pulse Test: tp = 300µs, δ = 2%.
Semelab plc.
Te...

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