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2N4900

Part Number	2N4900
Manufacturer	Motorola
Description	Medium-power PNP silicon transistors
Published	Nov 2, 2018
Detailed Description	2N4898 thru 2N4900 (SILICON) ~~CASE 80 CdP (TO·66) Medium-power PNP silicon transistors designed for driver circuits...
Datasheet	2N4900 PDF File

Overview

2N4898 thru 2N4900 (SILICON) ~~CASE 80 CdP (TO·66) Medium-power PNP silicon transistors designed for driver circuits, switching, and amplifier applications.
Complement to NPN 2N4910 thru 2N4912.
Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous * Base Current Total Device Dissipation TC 25°C Derate above 25° C Operating & Storage Junction Temperature Range Symbol 2N4898 2N4899 2N4900 VCEO 40 60 80 VCB VEB IC* IB .
40 60 5.
0 -1.
0 .
- 4 .
0 1.
0 P D 25 0.
143 r--T J , T stg 65 to +200 80 , • · • • Unit Vdc Vdc Vdc Adc Adc Watts W/oC °c THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case 8JC Max 7.
0 Unit °C/W • The 1.
0 Amp maximum IC value is based upon .
JEDEC current gain requirements.
The 4.
0 Amp maximum value is based upon actual current-handling capability of the device (see Figure 5).
FIGURE 1- POWER·TEMPERATURE DER...

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