SILICON EPITAXIAL
NPN TRANSISTOR
2N4912
• Low Saturation Voltage
Transistor In A Hermetic Metal Package
• Designed For Driver Circuits, Switching and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO Collector - Base Voltage
80V
VCEO Collector - Emitter Voltage
80V
VEBO Emitter – Base Voltage
5V
IC Continuous Collector Current
1.
0A
IB Base Current
1.
0A
PD Total Power Dissipation at Tc = 25°C
25W
Derate Above 25°C
0.
143W/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
...