MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol VCEO VCBO v EBO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Totai Device Dissipation, T/\ = 25°C Derate above 25°C
PD
Storage Temperature
Tstg
'Thermal Resistance Junction to Ambient
RftJA
•Package mounted on 99.
5% alumina 10 x 8 x 0.
6 mm.
Value 12 15
2.
0 25
Max
350 2.
8 150 357
Unit .
Vdc
Vdc Vdc mAdc
Unit
mW
mwrc
°C °C/W
BFR93.
S
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage c(l = 10 m...