DatasheetsPDF.com

BFR90A

Part Number	BFR90A
Manufacturer	TEMIC Semiconductors
Description	Silicon NPN Planar RF Transistor
Published	Mar 23, 2005
Detailed Description	BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplif...
Datasheet	BFR90A PDF File

Overview

BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier.
Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case (TO 50) 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb ≤ 60°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 15 2 30 300 150 –65 to +150 Unit V V V mA mW °C °C Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (40 x 25 x 1.
5) mm3 plated with 35 mm Cu Symbol RthJA Value 300 Unit K/W TELEFUNKEN Semiconductors Rev.
A1, 17-Apr-96 1 (6) BFR90A Electrical DC Characteristics Tj = 25°C, unless otherwise specified Parameters / Test Conditions Collector-emitter cut-off current VCE = 20 V, VBE = 0 Collector-base cut-off current VCB = 15 V, IE = 0 Emitter-base cut-off current VEB = 2 V, IC = 0 Collector-emitter breakdown voltage IC = 1 mA, IB = 0 DC forward current transfer ratio VCE = 10 V, IC = 14 mA Symbol ICES ICBO IEBO V(BR)CEO hFE 15 50 100 150 Min.
Typ.
Max.
100 100 10 Unit mA nA mA V Electrical AC Characteristics Tamb = 25°C Parameters / Test Conditions Transition frequency VCE = 10 V, IC = 14 mA, f = 500 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.
5 V, f = 1 MHz Noise figure VCE = 10 V, IC = 2 mA, f = 800 MHz, ZS = 50 W Power gain VCE = 10 V, IC = 14 mA, ZL = ZLopt, f = 800 MHz Linear output voltage – two tone intermodulation test VCE = 10 V, IC = 14 mA, dIM = 60 dB, ZS = ZL = 50 W, f1 = 806 MHz, f2 = 810 MHz Third order intercept point VCE = 10 V, IC = 14 mA, f = 800 MHz Symbol fT Cce Ccb Ceb F Gpe Min.
Typ.
6 0.
25 0.
3 0.
9 1.
8 16 Max.
Unit GHz pF pF pF dB dB V1 = V2 IP3 120 24 mV dBm 2 (6) TELEFUN...

Similar Datasheet

BFR90 Silicon NPN Planar RF Transistor - Vishay Telefunken
BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Microsemi Corporation
BFR90 HIGH FREQUENCY TRANSISTOR - Motorola
BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Advanced Power Technology
BFR90A Silicon NPN Planar RF Transistor - Vishay
BFR90A Silicon NPN Planar RF Transistor - TEMIC Semiconductors
BFR90G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Advanced Power Technology
BFR91 Silicon NPN Planar RF Transistor - Vishay Telefunken
BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Microsemi Corporation
BFR91 HIGH FREQUENCY TRANSISTOR - Motorola

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)