SILICON EPITAXIAL
PNP TRANSISTOR
2N4906
• Low Collector Saturation Voltage.
• Hermetic TO3 Metal Package.
• Designed For General Purpose, Switching
and Power Amplifier Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-80V
VCEO
Collector – Emitter Voltage
-80V
VEBO
Emitter – Base Voltage
-5V
IC Continuous Collector Current
-5A
IB Base Current
-1.
0A
PD Total Power Dissipation at TC = 25°C
87.
5W
Derate Above 25°C
0.
5W/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Ca...