8/2014
2N5432, 2N5433, 2N5494
N-Channel Silicon Junction Field-Effect
Transistor
∙ Low rDS(on) ∙ Excellent Switching ∙ Low Cutoff Current
Absolute maximum ratings at TA = 25oC
Reverse Gate Source & Gate Drain Voltage -25V
Continuous Forward Gate Current
100 mA
Continuous Device Power Dissipation 300 mW
Power Derating
2.
3 mW/oC
Storage Temperature Range
-65oC to +150oC
At 25oC free air temperature
Static Electrical Characteristics
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
Drain Saturation Current (pulsed)
IDSS
Dynamic Electrical Characteristics
Drain -Source On Resistance
rds(on)
Common-Source Input Capacitan...