INCHANGE Semiconductor
isc Silicon
PNP Darlington Power
Transistor
isc Product Specification
2N6666
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.
0V(Max)@ IC= -3A ·Complement to Type 2N6386
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40 V
VCEO
Collector-Emitter Voltage
-40 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-8 A
ICM Collector Current-Peak
-15 A
IBB Base Current-DC
Coll...