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2N6609

NTE
Part Number 2N6609
Manufacturer NTE
Description Silicon PNP Transistor
Published Feb 3, 2020
Detailed Description 2N6609 Silicon PNP Transistor Audio Amplifier Output TO−3 Type Package Description: The 2N6609 is a silicon PNP power t...
Datasheet PDF File 2N6609 PDF File

2N6609
2N6609



Overview
2N6609 Silicon PNP Transistor Audio Amplifier Output TO−3 Type Package Description: The 2N6609 is a silicon PNP power transistors in a TO−3 type package designed for high power audio, disk head positioners, and other linear applications.
It can also be used in power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters.
Features: D High Safe Operating Area 150W @ 100V D Completely Characterized for Linear Operation D High DC Current Gain and Low Saturation Voltage: hFE = 15 (Min) @ 8A, 4V VCE(sat) = 1.
4V (Max) @ IC = 8A, IB = 0.
8A Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO .
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140V Collector−Emitter Voltage, VCEX .
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160V Collector−Base Voltage, VCBO .
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160V Emitter−Base Voltage, VEBO .
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7V Collector Current, Continuous IC.
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16A Peak (Note 1) .
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30A Base Current, IB Continuous .
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4A Peak (Note 1) .
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15A Total PDowerearteDiAsbsiopvaetio+n25(TCC = .
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+25C), .
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P.
D.
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