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2N6609

Part Number	2N6609
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Oct 17, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N6609 DESCRIPTION ·Excellent Safe O...
Datasheet	2N6609 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N6609 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = -8A ·Low Saturation Voltage- : VCE(sat)= -1.
4V(Max)@ IC = -8A ·Complement to Type 2N3773 APPLICATIONS ·Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEX Collector-Emitter Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -16 A ICP Collector Current-Peak -30 A IB Base Current-Continuous -4 A IBP Base Current-Peak -15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBO...

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