Plastic-Encapsulate Mosfets
FEATURES
The AO3400 is the N-Channel logic enhancement mode power field effect
transistor is produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high side switching.
D
G S
AO3400
N-Channel MOSFET
1.
Gate 2.
Source 3.
Drain
SOT-23
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25°C T =70°C
Pulsed Drain Curren...