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AO3401

Alpha & Omega Semiconductors
Part Number AO3401
Manufacturer Alpha & Omega Semiconductors
Description P-Channel MOSFET
Published Nov 20, 2007
Detailed Description AO3401 30V P-Channel MOSFET General Description Product Summary The AO3401 uses advanced trench technology to provide...
Datasheet PDF File AO3401 PDF File

AO3401
AO3401

Overview
AO3401 30V P-Channel MOSFET General Description Product Summary The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.
5V) RDS(ON) (at VGS=-2.
5V) -30V -4.
0A < 50mΩ < 60mΩ < 85mΩ SOT23 Top View Bottom View D D D SG GS Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C ID IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum -30 ±12 -4 -3.
2 -27 1.
4 0.
9 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 70 100 63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev 6: Feb.
2011 www.
aosmd.
com Page 1 of 5 AO3401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-30V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±12V VDS=VGS ID=-250µA VGS=-10V, VDS=5V VGS=-10V, ID=-4.
0A RDS(ON) gFS VSD IS ISM Static Drain-Source On-Resistance VGS=-4.
5V, ID=-3.
7A VGS=-2.
5V, ID=-2A Forward Transconductance VDS=-5V, ID=-4.
0A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Pulsed Body-Diode CurrentB TJ=55°C TJ=125°C -30 -0.
5 -27 V -1 µA -5 ±100 nA -0.
9 -1.
3 V A 41 50 mΩ 62 75 47 60 mΩ 60 85 mΩ 17 S -0.
7 -1 V -2 A -27 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate res...


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