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AO3400

HOTTECH
Part Number AO3400
Manufacturer HOTTECH
Description N-Channel MOSFET
Published Jul 10, 2017
Detailed Description Plastic-Encapsulate Mosfets FEATURES The AO3400 is the N-Channel logic enhancement mode power field effect transistor i...
Datasheet PDF File AO3400 PDF File

AO3400
AO3400

Overview
Plastic-Encapsulate Mosfets FEATURES The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high side switching.
D G S AO3400 N-Channel MOSFET 1.
Gate 2.
Source 3.
Drain SOT-23 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C T =70°C Pulsed Drain Current C Power Dissipation B TA=25°C TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM PD TJ, TSTG Maximum 30 20 5.
8 4.
9 30 1.
4 1.
0 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A,D Maximum Junction-to-Lead t ≤ 10s Steady-S...


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