Plastic-Encapsulate Mosfets FEATURES The AO3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
G AO3407 P-Channel MOSFET D 1.
Gate 2.
Source 3.
Drain SOT-23 S Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C T =70°C Pulsed Drain Current C Power Dissipation B TA=25°C TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM PD TJ, TSTG Maximum -30 ±20 -4.
1 -3.
5 -25 1.
4 0.
9 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to...

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