Part Number
|
AO3409 |
Manufacturer
|
HOTTECH |
Description
|
P-Channel MOSFET |
Published
|
Jul 10, 2017 |
Detailed Description
|
Plastic-Encapsulate Mosfets
FEATURES
The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low ga...
|
Datasheet
|
AO3409
|
Overview
Plastic-Encapsulate Mosfets
FEATURES
The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
D
G S
AO3409
P-Channel MOSFET
1.
Gate 2.
Source 3.
Drain
SOT-23
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25°C T =70°C
Pulsed Drain Current C
Power Dissipation B
TA=25°C TA=70°C
Junction and Storage Temperature Range
VDS VGS
ID IDM PD
TJ, TSTG
Maximum
-30 ±20 -2.
6 -2.
2 -20 1.
4
1 -55 to 150
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Am...
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