SMD Type
P-Channel Enhancement Mode Field Effect
Transistor AO3409 (KO3409)
MOSFET
Features
VDS (V) = -30V ID = -2.
6 A (VGS = -10V) RDS(ON) 130m (VGS = -10V) RDS(ON) 200m (VGS = -4.
5V)
+0.
12.
4 -0.
1
SOT-23
2.
9 +0.
1 -0.
1
0.
4 +0.
1 -0.
1
3
12 0.
95 +0.
1
-0.
1
1.
9 +0.
1 -0.
1
+0.
11.
3 -0.
1
0.
55 0.
4
Unit: mm 0.
1 +0.
05
-0.
01
+0.
10.
97 -0.
1
0-0.
1 +0.
10.
38
-0.
1
11.
.
BGasaete 22.
.
ESmiotutrecre 33.
.
cDolrlaeicntor
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Power Dissipation
TA=25
TA=70
Themal Resistance.
Junction-to-Ambient
Themal Resistance.
Junction-to-Case
Junction and Storage Tempe...