Plastic-Encapsulate
Transistors
FEATURES
• Low VCE(sat): -0.
2V(Typ) IC/IB=-500mA/-50mA • Compliments 2SD1664
2SB1132 (
PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-40
VCEO
-32
VEBO
-5
IC 1
PC 500
TJ 150
Tstg -55to +150
Unit
V V V A
mW
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
unless otherwise specified) Test conditions
Collector-base breakdown voltage
VCBO
IC=-50μA,IE=0
Collector-emitter breakdown voltage
VCEO
IC=-1mA,IB=0
Emitter-base breakdown voltag...