JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
SOT-89-3L Plastic-Encapsulate
Transistors
2SB1189
TRANSISTOR (
PNP)
SOT-89-3L
FEATURES z High breakdown voltage z Complements to 2SD1767
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1.
BASE
2.
COLLECTOR 1
2
3.
EMITTER
3
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO VEBO IC PC TJ Tstg
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value -80
-80 -5 -0.
7 0.
5 150 -55~150
Unit V
V V A W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown vol...