NPN Silicon Epitaxial
Transistor
FEATURES
z Low Collector Saturation Voltage: VCE(sat)0.
4V( IC=1.
0A,IB =100mA)
z Excellent DC Current Gain Linearity: hFE=140Typ.
( VCE=1.
0V, IC=1.
0A)
z Complements to
PNP type 2SB798
Pb
Lead-free
Production specification
2SD999
SOT-89
ORDERING INFORMATION
Type No.
Marking
2SD999
CM/CL/CK
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO VCEO VEBO IC PC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Collector power dissipation
30 V 25 V 5.
0 V 1.
0 A 2.
0 W
Tj Junction Temperature
-55 to +150
℃
Tstg Storage Temperature
-55 to +150
℃
E117 Rev.
B
w...