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2SD907

INCHANGE
Part Number 2SD907
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 21, 2020
Detailed Description isc Silicon NPN Power Transistor 2SD907 DESCRIPTION ·High Collector Current ·Good Linearity of hFE ·High Reliability ·...
Datasheet PDF File 2SD907 PDF File

2SD907
2SD907

Overview
isc Silicon NPN Power Transistor 2SD907 DESCRIPTION ·High Collector Current ·Good Linearity of hFE ·High Reliability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio amplifier ·Series regulators ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.
5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
56 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION...


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