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2SD900

Part Number	2SD900
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD900 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min...
Datasheet	2SD900 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD900 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.
0V(Max.
)@ IC= 4.
5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 6 A 50 W 150 ℃ Tstg Stora...

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