ST 2SC4115
NPN Silicon Epitaxial Planar
Transistor
The
transistor is subdivided into three groups, Q, R and S, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
Features
˙ Low VCE(sat) ˙ Excellent current gain characteristics
TO-92 Plastic Package Weight approx.
0.
19g
Absolute Maximum Ratings (T a = 25 OC)
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current
Symbol VCBO VCEO VEBO
IC
Power Dissipation Junction Temperature Storage Temperature Range *Notes: Single pulse Pw=10ms
Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 40 20 6 3 5 300 150
-55 to +150
Unit V V V
A(DC) A(Pulse)*
m...