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2SC4105

INCHANGE
Part Number 2SC4105
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 21, 2020
Detailed Description isc Silicon NPN Power Transistor 2SC4105 DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) ...
Datasheet PDF File 2SC4105 PDF File

2SC4105
2SC4105

Overview
isc Silicon NPN Power Transistor 2SC4105 DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.
) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 1.
5 A Collector Power Dissipation@TC=25℃ 40 PC W Collector Power Dissipation@Ta=25℃ 1.
75 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.
4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.
4A ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 0.
4A; VCE= 5V hFE-2 DC Gurrent Gain IC= 2A; VCE= 5V hFE-3 DC Gurrent Gain IC= 10mA; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.
4A; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.
0MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 3A; IB1= 0.
6A; IB2= -1.
2A; RL= 66.
6Ω; VCC= 200V 2SC4105 MIN TYP.
MAX UNIT 400 V 500 V 7 V 0.
8 V 1.
5 V 10 μA 10 μA 15 50 10 10 20 MHz 50 pF 0.
5 μs 2.
5 μs 0.
3 μs  hFE-1 Classifications L M N 15-30 20-40 30-50 NOTICE： ISC reserves the rights to make changes of the content herein the datashee...


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