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2SC4102

GME
Part Number 2SC4102
Manufacturer GME
Description Silicon Transistor
Published Apr 20, 2018
Detailed Description Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE linearity.  Power dissipation:PCM=200mW Pb Lead-free Pr...
Datasheet PDF File 2SC4102 PDF File

2SC4102
2SC4102


Overview
Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE linearity.
 Power dissipation:PCM=200mW Pb Lead-free Production specification 2SC4102 APPLICATIONS  NPN Silicon Epitaxial Planar Transistor.
ORDERING INFORMATION Type No.
Marking 2SC4102 TP/TR/TS SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 120 120 5 50 200 -55 to +150 Units V V V mA mW ℃ F037 Rev.
A www.
gmesemi.
com 1 Production specification Silicon Epitaxial Planar Transistor 2SC4102 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage V(BR)CBO IC=50μA,IE=0 V(BR)CEO IC=1mA,IB=0 120 V 120 V Emitter-base breakdown vol...


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