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2SB649

Part Number 2SB649
Manufacturer LGE
Description PNP Transistor
Published Aug 18, 2017
Detailed Description 2SB649/2SB649A(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 7.400 7.800 2.500 1.100 2.900 1.500 Features ...
Datasheet 2SB649




Overview
2SB649/2SB649A(PNP) TO-126 Transistor TO-126 1.
EMITTER 2.
COLLECTOR 7.
400 7.
800 2.
500 1.
100 2.
900 1.
500 Features 3 2 1 3.
BASE Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage 2SB649 -120 V 2SB649A -160 VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -1.
5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless 3.
000 3.
200 10.
60 0 11.
00 0 15.
30 0 15.
70 0 3.
900 4.
100 2.
100 2.
300 1.
170 1.
370 0.
...






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