isc Silicon
NPN Power
Transistor
MJE243
DESCRIPTION ·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = 100 V(Min) ·DC Current Gain-
: hFE = 40(Min) @ IC= 0.
2 A ·Low Collector Saturation Voltage-
: VCE(sat) = 0.
3V(Max.
)@ IC= 0.
5 A ·Complement to the
PNP MJE253 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low power audio amplifier and low-current,
high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
100
VCEO
Collector-Emitter Voltage
100
VEBO
Emitter-Base Voltage
7
IC
Collector Current-Continuous
4
ICM
Collector Current-Peak
8
IB
Base Cur...