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MJE200G

Part Number	MJE200G
Manufacturer	ON Semiconductor
Description	Complementary Silicon Power Plastic Transistors
Published	Oct 24, 2016
Detailed Description	MJE200G (NPN), MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage...
Datasheet	MJE200G PDF File

Overview

MJE200G (NPN), MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications.
Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VCEO VCB VEB IC ICM IB PD 40 Vdc 25 Vdc 8.
0 Vdc 5.
0 Adc 10 Adc 1.
0 Adc 15 W 0.
12 mW/_C Total Power Dissipation @ TC = 25_C Derate above 25_C PD 1.
5 W 0.
012 mW/_C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of thes...

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