MJE200 -
NPN, MJE210 -
PNP
Preferred Device
Complementary Silicon Power Plastic
Transistors
These devices are Ădesigned for low voltage, low-power, high-gain
audio amplifier applications.
Features
•ăCollector-Emitter Sustaining Voltage -
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
•ăHigh DC Current Gain -
hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.
0 Adc = 10 (Min) @ IC = 5.
0 Adc
•ăLow Collector-Emitter Saturation Voltage -
VCE(sat) = 0.
3 Vdc (Max) @ IC = 500 mAdc = 0.
75 Vdc (Max) @ IC = 2.
0 Adc
•ăHigh Current-Gain - Bandwidth Product -
fT = 65 MHz (Min) @ IC = 100 mAdc
•ăAnnular Construction for Low Leakage -
ICBO = 100 nAdc @ Rated VCB
•ăPb-Free Packages are Available*
MAXIMUM RATINGS...