NPN Silicon Epitaxial Power
Transistor
P b Lead(Pb)-Free
Features: * DC Current Gain hFE = 40-320 @IC = 1.
0A * Low VCE(sat) ≤ 1.
0V(MAX) @IC = 2.
0A, IB = 0.
2A * Complememtary to
NPN 2SB507
COLLECTOR 2
BASE 1
3 EMITTER
ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Base Voltage
Collector Current
Total Device Disspation TA=25°C TC=25°C Derate above 25°C
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC
PD
TJ Tstg
2SD313
1 23
1.
BASE 2.
COLLECTOR
3.
EMITTER TO-220
Value 60 60
5.
0
3.
0
1.
75 30 0.
24 +150 -55 to +150
Unit V V V A
W W/˚C
˚C ˚C
ELECTRICAL CHARACTERISTICS Characteristics
Collector-Base Breakdown Vol...