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2SD313

WEITRON
Part Number 2SD313
Manufacturer WEITRON
Description NPN Silicon Epitaxial Power Transistor
Published Aug 23, 2017
Detailed Description NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(...
Datasheet PDF File 2SD313 PDF File

2SD313
2SD313

Overview
NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 40-320 @IC = 1.
0A * Low VCE(sat) ≤ 1.
0V(MAX) @IC = 2.
0A, IB = 0.
2A * Complememtary to NPN 2SB507 COLLECTOR 2 BASE 1 3 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA=25°C TC=25°C Derate above 25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ Tstg 2SD313 1 23 1.
BASE 2.
COLLECTOR 3.
EMITTER TO-220 Value 60 60 5.
0 3.
0 1.
75 30 0.
24 +150 -55 to +150 Unit V V V A W W/˚C ˚C ˚C ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=100µA, IE=0 Collector-Emitter Breakdown Voltage IC=1mA, IB=0 Emitter-Base Breakdown Voltage IE=100µA, IC=0 Collector Cut-Off Current VCB=60V, IE=0 Emitter-Cut-Off Current VEB=60V,IE=0 Emitter-Cut-Off Current VEB=4.
0V, IC=0 WEITRON http://www.
weitron.
com.
tw Symbol BVCBO BVCEO ...


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