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2SD310

Part Number	2SD310
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD310 DESCRIPTION ·High Collector-Emitter Sustaining Voltage-...
Datasheet	2SD310 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD310 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 6 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD310 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;Ib=0 VCE(sat) Co...

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