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2SB1290

Part Number 2SB1290
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Aug 28, 2017
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(...
Datasheet 2SB1290




Overview
isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -1.
0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1833 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperatur...






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