Part Number
|
HY1908S |
Manufacturer
|
HOOYI |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Oct 7, 2017 |
Detailed Description
|
HY1908D/U/S
N-Channel Enhancement Mode MOSFET
Features
• 80V/90A,
RDS(ON)=7.8 mΩ
(typ.) @ V =10V GS
• Avalanche Ra...
|
Datasheet
|
HY1908S
|
Overview
HY1908D/U/S
N-Channel Enhancement Mode MOSFET
Features
• 80V/90A,
RDS(ON)=7.
8 mΩ
(typ.
) @ V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
S
D G
TO-252-2L
S
D G
TO-251-3L
S
D G
TO-251-3L
Applications
• Power Management for Inverter Systems.
D
G N-Channel MOSFET
Ordering and Marking Information
S
DUS HY1908 HY1908 HY1908
YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G
Package Code D : TO-252-2L S : TO-251-3L
Date Code YYXXX WW
U : TO-251-3L
Assembly Material G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which ar...
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