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HY1904U

HOOYI
Part Number HY1904U
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published Sep 16, 2019
Detailed Description HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanc...
Datasheet PDF File HY1904U PDF File

HY1904U
HY1904U

Overview
HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.
8mΩ(typ.
)@VGS = 10V RDS(ON)= 5.
8mΩ(typ.
)@VGS = 4.
5V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Power Management for Inverter Systems Ordering and Marking Information N-Channel MOSFET DU HY1904 HY1904 YYXXXJWW G YYXXXJWW G V HY1904 YYXXXJWW G Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code YYXXX WW Assembly Material G:Halogen Free Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
HOOYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice.
www.
hooyi.
cc 1 V1.
0 HY1904D/U/V Absolute Maximum Ratings Symbol Parameter Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Source Current-Continuous(Body Diode) Tc=25°C Mounted on Large Heat Sink IDM Pulsed Drain Current * Tc=25°C ID Continuous Drain Current Tc=25°C Tc=100°C PD Maximum Power Dissipation Tc=25°C Tc=100°C RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient ** EAS Single Pulsed-Avalanche Energy *** L=0.
3mH Note: * ** *** Repetitive rating；pulse width limited by max.
junction temperature.
Surface mounted on FR-4 board.
Limited by TJmax , starting TJ=25°C...


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