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HY1904V

HOOYI
Part Number HY1904V
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published Sep 16, 2019
Detailed Description HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanc...
Datasheet PDF File HY1904V PDF File

HY1904V
HY1904V

Overview
HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.
8mΩ(typ.
)@VGS = 10V RDS(ON)= 5.
8mΩ(typ.
)@VGS = 4.
5V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Power Management for Inverter Systems Ordering and Marking Information N-Channel MOSFET DU HY1904 HY1904 YYXXXJWW G YYXXXJWW G V HY1904 YYXXXJWW G Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code YYXXX WW Assembly Material G:Halogen Free Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fu...


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