GPT04N60A
POWER FIELD EFFECT
TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP TO-251/ TO-251S
Top View
Front View
TO-252 Front View
D
GATE DRAIN SOURCE
GATE DRAIN SO...