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GPT04N60

Part Number	GPT04N60
Manufacturer	Greatpower
Description	POWER FIELD EFFECT TRANSISTOR
Published	Nov 8, 2017
Detailed Description	GENERAL DESCRIPTION GPT04N60 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to w...
Datasheet	GPT04N60 PDF File

Overview

GENERAL DESCRIPTION GPT04N60 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO-220/TO-220FP Top View TO-251 Front View TO-252 Front View D GATE DRAIN SOURCE GATE DRAIN SOURCE G 12 3 123 S N-C...

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