DatasheetsPDF.com

GPT04N65

Greatpower
Part Number GPT04N65
Manufacturer Greatpower
Description POWER FIELD EFFECT TRANSISTOR
Published Nov 8, 2017
Detailed Description GENERAL DESCRIPTION GPT04N65 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to w...
Datasheet PDF File GPT04N65 PDF File

GPT04N65
GPT04N65

Overview
GENERAL DESCRIPTION GPT04N65 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO-220/TO-220FP Top View TO-251 Front View TO-252 Front View D GATE DRAIN SOURCE GATE DRAIN SOURCE G 12 3 123 S N-C...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)