BUV21
SWITCHMODEt Series
NPN Silicon Power
Transistor
This device is designed for high speed, high current, high power applications.
Features
• High DC Current Gain:
hFE min = 20 at IC = 12 A
• Low VCE(sat), VCE(sat)
max = 0.
6 V at IC = 8 A
• Very Fast Switching Times:
TF max = 0.
4 ms at IC = 25 A
• These are Pb−Free Devices*
MAXIMUM RATINGS Rating
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage (VBE = −1.
5 V) Collector−Emitter Voltage (RBE = 100 W) Collector−Current − Continuous
− Peak (PW v 10 ms)
Base−Current Continuous Total Device Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range
Symbol VCEO(SUS)
VCBO VEBO VCEX VC...