Part Number
|
M29DW127G |
Manufacturer
|
Numonyx |
Description
|
128-Mbit 3V supply flash memory |
Published
|
Dec 18, 2017 |
Detailed Description
|
M29DW127G
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
Features
Suppl...
|
Datasheet
|
M29DW127G
|
Overview
M29DW127G
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
Features
Supply voltage – VCC = 2.
7 to 3.
6 V for program, erase and read – VCCQ = 1.
65 to 3.
6 V for I/O buffers – VPPH = 12 V for fast program (optional)
Asynchronous random/page read – Page width: 8 words / 16 bytes – Page access: 25 ns – Random access: 60 or 70, 80 ns
Enhanced Buffered Program commands – 256 words
Programming time – 15 μs per byte/word (typical) – 32-word write buffer – Chip program time: 5 s with VPPH and 8 s without VPPH
Erase verify
Memory blocks – Quadruple bank memory array: 16 Mbit+48 Mbit+48 Mbit+16 Mbit – Parameter blocks (at top and bottom)
Dual op...
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