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M29DW128F

Numonyx
Part Number M29DW128F
Manufacturer Numonyx
Description Flash memory
Published Jul 4, 2008
Detailed Description M29DW128F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory Feature summary ■ Supply...
Datasheet PDF File M29DW128F PDF File

M29DW128F
M29DW128F

Overview
M29DW128F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory Feature summary ■ Supply voltage www.
DataSheet4U.
com – VCC = 2.
7V to 3.
6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Asynchronous Random/Page Read – Page width: 8 Words – Page access: 25, 30ns – Random access: 60, 70ns Programming time – 10µs per Byte/Word typical – 4 Words / 8 Bytes Program – 32-Word Write Buffer Erase Verify Memory blocks – Quadruple Bank Memory Array: 16Mbit+48Mbit+48Mbit+16Mbit – Parameter Blocks (at Top and Bottom) Dual Operation – While Program or Erase in one bank, Read in any of the other banks Program/Erase Suspend and Resume modes – Read from any Block during Program Suspend – Read and Program another Block during Erase Suspend Unlock Bypass Program – Faster Production/Batch Programming Common Flash Interface – 64 bit Security Code 100,000 Program/Erase cycles per block ■ ■ ■ TSOP56 (NF) 14 x 20mm BGA ■ TBGA64 (ZA) 10 x 13mm Low power c...


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