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M29DW128F

ST Microelectronics
Part Number M29DW128F
Manufacturer ST Microelectronics
Description Flash memory
Published Apr 19, 2007
Detailed Description M29DW128F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory Feature summary ■ Suppl...
Datasheet PDF File M29DW128F PDF File

M29DW128F
M29DW128F

Overview
M29DW128F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory Feature summary ■ Supply voltage – VCC = 2.
7V to 3.
6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Asynchronous Random/Page Read – Page width: 8 Words – Page access: 25, 30ns – Random access: 60, 70ns Programming time – 10µs per Byte/Word typical – 4 Words / 8 Bytes Program – 32-Word Write Buffer Erase Verify Memory blocks – Quadruple Bank Memory Array: 16Mbit+48Mbit+48Mbit+16Mbit – Parameter Blocks (at Top and Bottom) ■ www.
DataSheet4U.
com ■ TSOP56 (NF) 14 x 20mm BGA ■ TBGA64 (ZA) 10 x 13mm Low power consumption – Standby and Automatic Standby Hardware Block Protection – VPP/WP Pin for fast program and write protect of the four outermost parameter blocks Security features – Standard Protection – Password Protection Extended Memory Block – Extra block used as security block or to store additional information Electronic Signature – Manufacturer Code: 0020h – Device Code: 227Eh + 2220h + 2200h ECOPACK® packages available ■ ■ ■ ■ Dual Operation – While Program or Erase in one bank, Read in any of the other banks Program/Erase Suspend and Resume modes – Read from any Block during Program Suspend – Read and Program another Block during Erase Suspend Unlock Bypass Program – Faster Production/Batch Programming Common Flash Interface – 64 bit Security Code 100,000 Program/Erase cycles per block ■ ■ ■ ■ ■ ■ ■ ■ October 2006 Rev 7 1/94 www.
st.
com 1 Contents M29DW128F Contents 1 2 Summary description .
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8 Signal descriptions .
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13 Address Inputs (A0-A22) .
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14 Data Inputs/Outputs (DQ0-DQ7) .
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14 Data In...


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