Part Number
|
HY1608B |
Manufacturer
|
HOOYI |
Description
|
N-Channel MOSFET |
Published
|
Jan 26, 2018 |
Detailed Description
|
HY1608P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Dr...
|
Datasheet
|
HY1608B
|
Overview
HY1608P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Voltage
TJ Maximum Junction Temperature TSTG Storage Temperature Range
IS Diode Continuous Forward Current Mounted on Large Heat Sink
TC=25°C
80 ±25 175 -55 to 175 65
IDM Pulsed Drain Current * ID Continuous Drain Current
PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings
TC=25°C TC=100°C TC=25°C TC=100°C
260** 65 46 126 63 1.
19 62.
5
EAS Avalanche Energy, Single Pulsed
L=0.
5mH
284***
Note * Repetitive rating ; pulse width limiited by junction tempera...
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