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HY1606AP

HOOYI
Part Number HY1606AP
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published Feb 27, 2014
Detailed Description HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated ...
Datasheet PDF File HY1606AP PDF File

HY1606AP
HY1606AP

Overview
HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.
5 mΩ (typ.
) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Pin Description G D S D Applications G • Power Management for Inverter Systems.
S N-Channel MOSFET Ordering and Marking Information Package Code P HY1606A ÿ YYWWJ G P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL...


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