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HY1606P

HOOYI
Part Number HY1606P
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published Feb 27, 2014
Detailed Description HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V • 100% avalanche tes...
Datasheet PDF File HY1606P PDF File

HY1606P
HY1606P

Overview
HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.
4 mΩ (typ.
) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems.
D G N-Channel MOSFET Ordering and Marking Information S PB HY1606 HY1606 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
H...


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