DISCRETE SEMICONDUCTORS
DATA SHEET
M3D392
BLF647 UHF power LDMOS
transistor
Product specification Supersedes data of 2001 Aug 02 2001 Nov 27
Philips Semiconductors
Product specification
UHF power LDMOS
transistor
FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 800 MHz) • Internal input damping for excellent stability over the whole frequency range.
APPLICATIONS • Communication transmitter applications in the HF to 800 MHz frequency range.
3 4
MBK777
BLF647
PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source, connected to flange D...